Numerical simulation of thermal-mechanical of IGBT Al metalization layer under power cycling-Reference-Cited by-同舟云学术

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Numerical simulation of thermal-mechanical of IGBT Al metalization layer under power cycling

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Zheng Xueheng¹,An Tong²,Qin Fei²,Gong Yanpeng²,Dai Yanwei²,Chen Pei²

Affiliation:

1. Beijing University of Technology,Institute of Electronics Packaging Technology and Reliability Faculty of Materials and Manufacturing,Beijing,China

2. Beijing University of Technology,Institute of Electronics Packaging Technology and Reliability Beijing Key Laboratory of Advanced Manufacturing Technology Faculty of Materials and Manufacturing,Beijing,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09872747.pdf?arnumber=9872747

Reference13 articles.

1. Universal mechanisms of Al metallization ageing in power MOSFET devices

2. Electro-thermal and thermal-mechanical FE analysis of IGBT module with different bonding wire shape

3. Numerical simulation of the wire bonding reliability of IGBT module under power cycling

4. Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions

5. PLASTIC-STRAIN OF ALUMINIUM INTERCONNECTIONS DURING PULSED OPERATION OF IGBT MULTICHIP MODULES

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