Author:
Hao Feng ,Pang J.P.,Sugiyama M.,Tada K.,Nakano Y.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Cited by
68 articles.
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1. Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well;The European Physical Journal Plus;2024-01-17
2. Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors;Physica B: Condensed Matter;2022-06
3. Design of InGaAsP phase modulator with asymmetrically coupled quantum wells for efficient polarization modulation;Japanese Journal of Applied Physics;2020-07-28
4. Studies on the refractive index modulation in tunnel-coupled quantum-confined active regions of AlGaAs/GaAs semiconductor heterostructures by the p–n junction electric field;Semiconductor Science and Technology;2019-08-28
5. Эффект гигантского изменения показателя преломления в
гетероструктурах с туннельно-связанными квантовыми ямами:
теория и эксперимент /
Золотарев В.В., Шашкин И.С., Соболева О.С., Головин В.С., Рудова Н.А., Шамахов В.В.,
Николаев Д.Н., Слипченко С.О., Пихтин Н.А.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20