A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor-Reference-Cited by-同舟云学术

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A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor

Published:2005-03 Issue:3 Volume:26 Page:148-150
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lai C.H.,Chin A.,Hung B.F.,Cheng C.F.,Won Jong Yoo ,Li M.F.,Chunxiang Zhu ,McAlister S.P.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30402/01397842.pdf?arnumber=1397842

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory;Thin Solid Films;2012-12

2. Fabrication and electrical characterization of MONOS memory with novel high- k gate stack;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12

3. Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method;Electronic Materials Letters;2009-06-26

4. High-kHfxGdyOzCharge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory byIn situRadio Frequency Dual-Sputtering Method;Japanese Journal of Applied Physics;2009-05-20

5. A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers;Applied Physics Letters;2008-12-08

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