Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$-Reference-Cited by-同舟云学术

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Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

Published:2013-03 Issue:3 Volume:34 Page:384-386
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Veliadis V.,Steiner B.,Lawson K.,Bayne S. B.,Urciuoli D.,Ha H. C.,El-Hinnawy N.,Gupta S.,Borodulin P.,Howell R. S.,Scozzie C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6468094/06459530.pdf?arnumber=6459530

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