1-kV β-Ga<sub>2</sub>O<sub>3</sub>UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel-Reference-Cited by-同舟云学术

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1-kV β-Ga₂O₃UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel

Published:2024-06-02 Issue: Volume: Page:236-239
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Liu Qi¹,Zhou Xuanze¹,Wong Man Hoi²,Yao Huidong¹,Zhou Jingbo¹,Zhang Xiaodong³,Xu Guangwei¹,Long Shibing¹

Affiliation:

1. School of Microelectronics, University of Science and Technology of China,Hefei,China

2. Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China

3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Suzhou,China

Funder

National Natural Science Foundation of China

University of Science and Technology of China

Chinese Academy of Sciences

Center for Micro- and Nanoscale Research and Fabrication

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579625.pdf?arnumber=10579625

Reference21 articles.

1. Multidimensional device architectures for efficient power electronics

2. β-Gallium oxide power electronics

3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

5. Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

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