3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation
Author:
Affiliation:
1. Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579564.pdf?arnumber=10579564
Reference12 articles.
1. Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications
2. Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices
3. HyFET—A GaN/SiC Hybrid Field-Effect Transistor
4. A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
5. Evaluation of high-voltage cascode GaN HEMT in different packages
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