Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation-Reference-Cited by-同舟云学术

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Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation

Published:2004-12 Issue:6 Volume:51 Page:3788-3794
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Binkley D.M.,Hopper C.E.,Cressler J.D.,Mojarradi M.M.,Blalock B.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/29973/01369559.pdf?arnumber=1369559

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1. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

2. The total dose effects on the 1/fnoise of deep submicron CMOS transistors;Journal of Semiconductors;2014-02

3. Operation of RF Power MOSFETs under Proton Radiation;2006 European Microwave Integrated Circuits Conference;2006-09

4. Optimizing Drain Current, Inversion Level, and Channel Length in Analog CMOS Design;Analog Integrated Circuits and Signal Processing;2006-03-10

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