Self-heat reliability considerations on Intel's 22nm Tri-Gate technology-Reference-Cited by-同舟云学术

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Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Prasad C.,Jiang L.,Singh D.,Agostinelli M.,Auth C.,Bai P.,Eiles T.,Hicks J.,Jan C. H.,Mistry K.,Natarajan S.,Niu B.,Packan P.,Pantuso D.,Post I.,Ramey S.,Schmitz A.,Sell B.,Suthram S.,Thomas J.,Tsai C.,Vandervoorn P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06532036.pdf?arnumber=6532036

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-Carrier Aging by Ultrafast Laser on 22FLL FinFET Technology;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Optimization of Negative Differential Conductance (NDC) Point for Multi Gate Devices Considering Self Heating Effects Using Surface to Volume Ratio (SVR);Springer Proceedings in Physics;2024

3. Understanding the Effects of Permanent Faults in GPU's Parallelism Management and Control Units;Proceedings of the International Conference for High Performance Computing, Networking, Storage and Analysis;2023-11-11

4. Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Localized thermal effects in Gate-all-around devices;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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