Suitability of high-k gate oxides for III–V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf>-Reference-Cited by-同舟云学术

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Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Franco J.,Alian A.,Kaczer B.,Lin D.,Ivanov T.,Pourghaderi A.,Martens K.,Mols Y.,Zhou D.,Waldron N.,Sioncke S.,Kauerauf T.,Collaert N.,Thean A.,Heyns M.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861098.pdf?arnumber=6861098

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01

2. Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

3. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric*;Chinese Physics B;2020-03-01

4. Electrical properties of the HfO2/Al2O3 dielectrics stacked using single- and dual-temperature atomic-layer deposition processes on In0.53Ga0.47As;Semiconductor Science and Technology;2019-09-16

5. A comprehensive investigation of the bias temperature instability associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks;Japanese Journal of Applied Physics;2018-09-10

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