Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors-Reference-Cited by-同舟云学术

Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors

Published:2015-10 Issue:10 Volume:62 Page:3229-3236
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Yijiao,Al-Ameri Talib,Wang Xingsheng,Georgiev Vihar P.,Towie Ewan,Amoroso Salvatore Maria,Brown Andrew R.,Cheng Binjie,Reid David,Riddet Craig,Shifren Lucian,Sinha Saurabh,Yeric Greg,Aitken Robert,Liu Xiaoyan,Kang Jinfeng,Asenov Asen

Funder

China Scholarship Council

European Commission within FP7 through the Modeling of the Reliability and Degradation of Next Generation Nanoelectronic Devices

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7272173/07244228.pdf?arnumber=7244228

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