Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs-Reference-Cited by-同舟云学术

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Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Published:2022-09-12 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Author:

Das Samadrita¹,Lenka Trupti Ranjan¹,Talukdar Fazal Ahmed¹,Velpula Ravi Teja²,Nguyen Hieu Pham Trung²,Crupi Giovanni³

Affiliation:

1. National Institute of Technology Silchar,Department of Electronics and Communication Engineering,Assam,India,788010

2. New Jersey Institute of Technology,Department of Electrical and Computer Engineering,Newark,New Jersey,USA,07102

3. University of Messina,BIOMORF Department,Messina,Italy,98125

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9894736/9894737/09894827.pdf?arnumber=9894827

Reference5 articles.

1. ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

2. Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

3. High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

4. Using adaptive equalization and polarization-multiplexing technology for gigabit-per-second phosphor-LED wireless visible light communication

5. Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-02

2. Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

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