Charge trapping challenges of CMOS embedded complementary FeFETs-Reference-Cited by-同舟云学术

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Charge trapping challenges of CMOS embedded complementary FeFETs

Published:2024-05-12 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE International Memory Workshop (IMW)
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Author:

Beyer Sven¹,Kleimaier Dominik¹,Dünkel Stefan¹,Mulaosmanovic Halid¹,Soss Steven¹,Müller Johannes¹,Jiang Zhouhang²,Ni Kai²,Mikolajick Thomas³,Zhou Haidi⁴

Affiliation:

1. GlobalFoundries Module One LLC &Co. KG,Dresden,Germany

2. University of Notre Dame,Notre Dame,Indiana,USA

3. NaMLab gGmbH,Dresden,Germany

4. Ferroelectric Memory GmbH,Dresden,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10536936/10536916/10536957.pdf?arnumber=10536957

Reference12 articles.

1. First demonstration of in-memory computing crossbar using multi-level Cell FeFET

2. FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends

3. FeFET: A versatile CMOS compatible device with game-changing potential

4. Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

5. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

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