Stability of InP/ZnSe/ZnS Quantum Dots in Light-Emitting Diodes: Role of Shell Thickness and Surface Chemistry
Author:
Affiliation:
1. Fraunhofer-Institut für Angewandte Polymerforschung (IAP),Potsdam,Germany
2. University of Potsdam Institute of Chemistry,Potsdam,Germany
Funder
European Union's Horizon 2020 research and innovation program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9933722/9933995/09934113.pdf?arnumber=9934113
Reference33 articles.
1. Enhanced Electroluminescence via a Nanohybrid Material Consisting of Aromatic Ligand-Modified InP Quantum Dots and an Electron-Blocking Polymer as the Single Active Layer in Quantum Dot–LEDs
2. Utilizing Self-Exchange To Address the Binding of Carboxylic Acid Ligands to CdSe Quantum Dots
3. Synthesis and characterization studies of ZnSe quantum dots
4. Temperature Dependence of the Band-Gap Energy and Sub-Band-Gap Absorption Tails in Strongly Quantized ZnSe Nanocrystals Deposited as Thin Films
5. Hydrosilylation of reactive quantum dots and siloxanes for stable quantum dot films;carrillo-carrión;Polymers,2019
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