Graphene-Silicon Heterojunction Photodetector with plasmonic metasurface for graphene gating and optical absorption enhancement-Reference-Cited by-同舟云学术

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Graphene-Silicon Heterojunction Photodetector with plasmonic metasurface for graphene gating and optical absorption enhancement

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 Opto-Electronics and Communications Conference (OECC)
language:
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Author:

Yu Laiwen¹,Guo Jingshu¹,Liu Chayue¹,Xiang Hengtai¹,Dai Daoxin¹

Affiliation:

1. Zhejiang University,College of Optical Science and Engineering,Hanghzou,China

Funder

Research and Development

National Science Fund for Distinguished Young Scholars

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10209604/10209571/10209660.pdf?arnumber=10209660

Reference11 articles.

1. Plasmonic Photodetectors, Photovoltaics, and Hot-Electron Devices

2. Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

3. Graphene Schottky Varactor Diodes for High-Performance Photodetection

4. High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

5. Plasmonically Enhanced Graphene Photodetector Featuring 100 Gbit/s Data Reception, High Responsivity, and Compact Size

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