A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate-Reference-Cited by-同舟云学术

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Published:2008-02 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
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Author:

Li Yan,Lee Seungpil,Fong Yupin,Pan Feng,Kuo Tien-Chien,Park Jong,Samaddar Tapan,Nguyen Hao,Mui Man,Htoo Khin,Kamei Teruhiko,Higashitani Masaaki,Yero Emilio,Kwon Gyuwan,Kliza Phil,Wan Jun,Kaneko Tetsuya,Maejima Hiroshi,Shiga Hitoshi,Hamada Makoto,Fujita Norihiro,Kanebako Kazunori,Tam Eugene,Koh Anne,Lu Iris,Kuo Calvin,Pham Trung,Huynh Jonathan,Nguyen Qui,Chibvongodze Hardwell,Watanabe Mitsuyuki,Oowada Ken,Shah Grishma,Woo Byungki,Gao Ray,Chan James,Lan James,Hong Patrick,Peng Liping,Das Debi,Ghosh Dhritiman,Kalluru Vivek,Kulkarni Sanjay,Cernea Raul,Huynh Sharon,Pantelakis Dimitris,Wang Chi-Ming,Quader Khandker

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4497158/4523032/04523279.pdf?arnumber=4523279

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