A 7-dB 43-GHz CMOS Distributed Amplifier on High-Resistivity SOI Substrates-Reference-Cited by-同舟云学术

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A 7-dB 43-GHz CMOS Distributed Amplifier on High-Resistivity SOI Substrates

Published:2008-03 Issue:3 Volume:56 Page:587-598
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Pavageau C.,Si Moussa M.,Raskin J.-P.,Vanhoenaker-Janvier D.,Fel N.,Russat J.,Picheta L.,Danneville F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/4463922/04447390.pdf?arnumber=4447390

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Demonstration of Mm-Wave Distributed Amplifiers With Modified Artificial Transmission Line Model;IEEE Transactions on Terahertz Science and Technology;2022-07

2. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs;IEEE Journal of the Electron Devices Society;2021

3. The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs;IEEE Microwave Magazine;2018-06

4. Supply-Scaling for Efficiency Enhancement in Distributed Power Amplifiers;IEEE Journal of Solid-State Circuits;2016-09

5. A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 nm CMOS Technology;IEEE Microwave and Wireless Components Letters;2013-12

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