Effects of discharge frequency on plasma characteristics and etching characteristics in high density Cl/sub 2/ plasma: comparison of ultrahigh-frequency plasma and radio-frequency plasma
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Condensed Matter Physics,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx4/27/16145/00747879.pdf?arnumber=747879
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-Dimensional Particle Simulations for Microhollow-Cathode Discharges: Comparison of Secondary Electron Emission Models;Journal of the Korean Physical Society;2008-12-15
2. High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry;Microelectronic Engineering;2008-05
3. Self-consistent global model for inductively coupled Cl2 plasma: Comparison with experimental data and application for the etch process analysis;Thin Solid Films;2007-05
4. Estimation of dissociation degree of N2 in an inductively coupled plasma by vacuum ultraviolet emission spectroscopy;Journal of Applied Physics;2002-09-15
5. Development of high-density plasma reactor for high-performance processing and future prospects;Applied Surface Science;2002-05
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