Design and Characterization of CMOS/SOI Image Sensors-Reference-Cited by-同舟云学术

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Design and Characterization of CMOS/SOI Image Sensors

Published:2007-03 Issue:3 Volume:54 Page:468-475
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Brouk Igor,Alameh Kamal,Nemirovsky Yael

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4114830/04114832.pdf?arnumber=4114832

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-09-21

2. Growth of 100 mm indium antimonide single crystals by modified Czochralski technique;Modern Electronic Materials;2021-06-30

3. Suppressing crosstalk in the photoelectron in-situ sensing device (PISD) by double SOI;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01

4. CMOS circuits for high-performance imaging;High Performance Silicon Imaging;2020

5. A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology;IEEE Electron Device Letters;2019-05

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