Submicron GaAs microwave FET's with low parasitic gate and source resistances-Reference-Cited by-同舟云学术

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Submicron GaAs microwave FET's with low parasitic gate and source resistances

Published:1983-02 Issue:2 Volume:4 Page:42-44
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bandy S.G.,Chai Y.G.,Chow R.,Nishimoto C.K.,Zdasiuk G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31886/01483384.pdf?arnumber=1483384

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3. InP and GaN high electron mobility transistors for millimeter-wave applications;IEICE Electronics Express;2015

4. GaAs- and InP-Based High-Electron-Mobility Transistors;Comprehensive Semiconductor Science and Technology;2011

5. Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors;Japanese Journal of Applied Physics;2009-04-20

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