Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $\mathrm{A}1_{2}\mathrm{O}_{3}$ Gate Dielectrics-Reference-Cited by-同舟云学术

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Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $\mathrm{A}1_{2}\mathrm{O}_{3}$ Gate Dielectrics

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Zheng Zhongshan¹,Zhu Huiping¹,Chen Xi¹,Wang Lei¹,Li Bo¹,Gao Jiantou¹,Li Duoli¹,Luo Jiajun¹,Han Zhengsheng¹,Liu Xinyu¹,Liu Jie²

Affiliation:

1. Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, and also with Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029

2. Institute of Modern Physics, Chinese Academy of Sciences,Lanzhou,China,730000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745651.pdf?arnumber=9745651

Reference10 articles.

1. Total Ionizing Dose Radiation Effects in Al$_{2}$O$_{3}$-Gated Ultra-Thin Body In$_{0.7}$Ga$_{0.3}$As MOSFETs

2. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

3. Coulomb Explosion and Thermal Spikes

4. Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

5. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks

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