Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops

Published:2015-12 Issue:6 Volume:62 Page:2578-2584
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Narasimham Balaji,Hatami Safar,Anvar Ali,Harris David M.,Lin Alvin,Wang Jung K.,Chatterjee Indranil,Ni Kai,Bhuva Bharat L.,Schrimpf Ronald D.,Reed Robert A.,McCurdy Mike W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/7348735/07339714.pdf?arnumber=7339714

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Voltage Dependence of Single-Event Cross Sections of FinFET SRAMs for Low LET Condition;IEEE Transactions on Nuclear Science;2023-08

3. Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7- and 5-nm Bulk FinFET Nodes;IEEE Transactions on Nuclear Science;2023-08

4. Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology;IEEE Transactions on Nuclear Science;2023-08

5. Evaluation of Single-Event Upset in FinFET Device;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP