Influence of Packaging Structure on Switch Performance of GaN HEMT Half-Bridge Circuits-Reference-Cited by-同舟云学术

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Influence of Packaging Structure on Switch Performance of GaN HEMT Half-Bridge Circuits

Published:2021-12-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)
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Author:

Ma Chuangwei,Zhu Wenhui,Wang Liancheng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9663571/9663865/09663992.pdf?arnumber=9663992

Reference28 articles.

1. A multiloop method for minimization of parasitic inductance in GaN-based high-frequency DC–DC converter;kangping;IEEE Transactions on Power Electronics,0

2. Research of Power Loop Layout and Parasitic Inductance in GaN Transistor Implementation

3. Efficient Power Conversion Corporation;EPC2015C,2013

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal analysis of GaN HEMTs using nongray multi-speed phonon lattice Boltzmann method under Joule heating effect;Microelectronics Journal;2024-09

2. Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout;Semiconductor Science and Technology;2024-03-08

3. Effect of parasitic inductances on the switching responses of eGaN HEMTs;2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM);2022-10-26

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