Nano-scale Quantum Modified SnTe/Pb0.98Sn0.02Te Supper lattice Structure Based Highly Sensitive Exotic p+-i-n+ IR Photo-detector
Author:
Affiliation:
1. National Institute of Technology Rourkela,Department of Computer Science Engineering,Odissa,India
2. Chaibasa Engineering College,Department of Electronics & Communication Engineering,Jharkhand,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10306338/10306339/10307683.pdf?arnumber=10307683
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1. Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment
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3. III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies
4. Characteristics of Noveln Silicon pin Photodiode Made by Rapid Thermal Diffusion Technique;ismail;Journal of Electron Devices,2012
5. Strain—Engineered Asymmetrical Si/Si1–xGex IR-Photo-Detector: Theoretical Reliability and Experimental Feasibility Studies
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