Behavior of Bonding Strength on Wafer-to-Wafer Cu-Cu Hybrid Bonding-Reference-Cited by-同舟云学术

Behavior of Bonding Strength on Wafer-to-Wafer Cu-Cu Hybrid Bonding

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
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Author:

Furuse Shunsuke¹,Fujii Nobutoshi¹,Kotoo Kengo¹,Ogawa Naoki¹,Saito Suguru¹,Yamada Taichi¹,Hirano Takaaki¹,Hagimoto Yoshiya¹,Iwamoto Hayato¹

Affiliation:

1. Sony Semiconductor Solutions Corporation,Department 2 Research Division 2,Kanagawa,Japan

Funder

Technology Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816718.pdf?arnumber=9816718

Reference6 articles.

1. 1.5 pm Dual Conversion Gain, Backside Illuminated Image Sensor Using Stacked Pixel Level Connections with 13ke- Full-Well Capacitance and 0.8e- Noise;venezia;IEDM,2018

2. Study of Cu pad thermal expansion effect on fine-pitch Cu-Cu hybrid bonding technology;hashiguchi;ADMETA plus,2019

3. Bonding of silicon wafers for silicon‐on‐insulator

4. Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

5. Impacts of Misalignment on 1 pm Pitch Cu-Cu Hybrid Bonding;kagawa;IITC,2020

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