Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory Applications-Reference-Cited by-同舟云学术

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Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory Applications

Published:2011-12 Issue:12 Volume:58 Page:4189-4195
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chakrabarti Bhaswar,Kang Heesoo,Brennan Barry,Park Tae Joo,Cantley Kurtis D.,Pirkle Adam,McDonnell Stephen,Kim Jiyoung,Wallace Robert M.,Vogel Eric M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6074986/06062399.pdf?arnumber=6062399

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition;Journal of Alloys and Compounds;2022-12

2. Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfOx/SiOx bi-layer protected Si photocathodes;Scientific Reports;2019-06-24

3. Polymer‐Assisted Deposition of Al‐Doped HfO 2 Thin Film with Excellent Dielectric Properties;Advanced Materials Interfaces;2019-06-05

4. High-k Dielectric for Nanoscale MOS Devices;Outlook and Challenges of Nano Devices, Sensors, and MEMS;2017

5. Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory;Microelectronics Reliability;2014-02

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