Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics-Reference-Cited by-同舟云学术

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Published:2011-07 Issue:7 Volume:58 Page:2094-2103
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jung Hyung-Suk,Lee So-Ah,Rha Sang-ho,Lee Sang Young,Kim Hyo Kyeom,Kim Do Hyun,Oh Kyu Hwan,Park Jung-Min,Kim Weon-Hong,Song Min-Woo,Lee Nae-In,Hwang Cheol Seong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5896011/05763770.pdf?arnumber=5763770

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