Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology-Reference-Cited by-同舟云学术

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Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology

Published:2011-07 Issue:7 Volume:58 Page:2028-2035
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Richardson Justin A.,Webster Eric A. G.,Grant Lindsay A.,Henderson Robert K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5896011/05770197.pdf?arnumber=5770197

Cited by 120 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perimeter-Gated Single-Photon Avalanche Diode Imagers;Single-Photon Avalanche Diodes and Photon Counting Systems;2024-06-11

2. Optoelectronic Characteristics of Perimeter-Gated Single-Photon Avalanche Diodes;Single-Photon Avalanche Diodes and Photon Counting Systems;2024-06-11

3. Review of Back-Side Illuminated 3-D-Stacked SPADs for Time-of-Flight and Single-Photon Imaging;IEEE Transactions on Electron Devices;2024-06

4. Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm² DCR at 2 V Excess Bias Voltage in 130 nm CMOS;IEEE Electron Device Letters;2024-03

5. Analytical Model of Dark Count Rate in Single-Photon Avalanche Diodes;IEEE Sensors Journal;2024-02-01

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