Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays-Reference-Cited by-同舟云学术

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Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Lee Myoung-Jae,Lee Dongsoo,Kim Hojung,Choi Hyun-Sik,Park Jong-Bong,Kim Hee Goo,Cha Young-Kwan,Chung U-In,Yoo In-Kyeong,Kim Kinam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06478966.pdf?arnumber=6478966

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

2. The role of arsenic in the operation of sulfur-based electrical threshold switches;Nature Communications;2023-09-29

3. Defect Engineering of BTe Ovonic Threshold Switch (OTS) With Nitrogen Doping for Improved Electrical and Reliability Performance;IEEE Electron Device Letters;2023-09

4. High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications;ACS Applied Nano Materials;2023-06-03

5. Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics;IEEE Transactions on Electron Devices;2023-02

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