Improvement of HfO<inf>2</inf> based RRAM array performances by local Si implantation-Reference-Cited by-同舟云学术

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Improvement of HfO2 based RRAM array performances by local Si implantation

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
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Author:

Barlas M.,Grossi A.,Grenouillet L.,Vianello E.,Nolot E.,Vaxelaire N.,Blaise P.,Traore B.,Coignus J.,Perrin F.,Crochemore R.,Mazen F.,Lachal L.,Pauliac S.,Pellissier C.,Bernasconi S.,Chevalliez S.,Nodin J. F.,Perniola L.,Nowak E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268392.pdf?arnumber=8268392

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays;Nature Communications;2024-04-24

2. Integration of HfO₂-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

3. Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing;ACS Applied Electronic Materials;2022-04-28

4. NVMExplorer: A Framework for Cross-Stack Comparisons of Embedded Non-Volatile Memories;2022 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2022-04

5. Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State;Electronics;2021-09-10

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