First experimental Ge CMOS FinFETs directly on SOI substrate-Reference-Cited by-同舟云学术

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First experimental Ge CMOS FinFETs directly on SOI substrate

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Chung Cheng-Ting,Chen Che-Wei,Lin Jyun-Chih,Wu Che-Chen,Chien Chao-Hsin,Luo Guang-Li

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479054.pdf?arnumber=6479054

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

2. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide;Nature;2023-03-22

3. Low-Frequency Noise in III–V, Ge, and 2D Transistors;Noise in Nanoscale Semiconductor Devices;2020

4. Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 Treatment;IEEE Journal of the Electron Devices Society;2018

5. Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance;Microsystem Technologies;2017-11-20

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