6Å EOT Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFET with optimized reliability (V<inf>DD</inf>=1V): Meeting the NBTI lifetime target at ultra-thin EOT-Reference-Cited by-同舟云学术

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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Franco J.,Kaczer B.,Eneman G.,Mitard J.,Stesmans A.,Afanas'ev V.,Kauerauf T.,Roussel Ph.J.,Toledano-Luque M.,Cho M.,Degraeve R.,Grasser T.,Ragnarsson L.-A.,Witters L.,Tseng J.,Takeoka S.,Wang W.-E.,Hoffmann T.Y.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703292.pdf?arnumber=5703292

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping;IEEE Electron Device Letters;2021-12

2. Limits of Gate Dielectrics Scaling;Handbook of Thin Film Deposition;2018

3. Manufacturing Solutions;Dependable Multicore Architectures at Nanoscale;2017-08-30

4. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs;MRS Advances;2016-05-23

5. Conclusions and Perspectives;Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications;2013-10-19

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