A Fast and Accurate Spice Circuit Simulation Modeling Method of GaN HEMT-Reference-Cited by-同舟云学术

A Fast and Accurate Spice Circuit Simulation Modeling Method of GaN HEMT

Published:2022-11-04 Issue: Volume: Page:
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Container-title:2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC)
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Author:

Hu Yingpeng¹,Sun Pengju¹,Bai Jinquan²

Affiliation:

1. Chongqing University,State Key Laboratory of Power Transmission Equipment and System Security and New Technology,Chongqing,China

2. EHV Branch Company Of State Grid Zhejiang Electric Power Company LTD STATE GRID Zhejiang Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9958944/9959090/09959423.pdf?arnumber=9959423

Reference9 articles.

1. Characterization and Modeling of a Gallium Nitride Power HEMT;kang;IEEE Transactions on Industry Applications,2016

2. Analytical Switching Loss Modelling based on Datasheet Parameters for MOSFETs in a Half-Bridge;christen;IEEE Transactions on Power Electronics,2018

3. A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors

4. Non-segmented Pspice Circuit Model of GaN HEMT with Simulation Convergence Consideration;hong;IEEE Transactions on Industrial Electronics,2017

5. A novel charge based SPICE model for nonlinear device capacitances

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