Design and analysis of a source pocket dual material hetero dielectric double gate TFET for improved performance
Author:
Affiliation:
1. Meerut Institute of Engineering and Technology,Electronics and Communication Engineering,Meerut,India
2. Motilal Nehru National Institute of Technology Allahabad,Electronics and Communication Engineering,Priyagraj,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10110034/10110036/10110167.pdf?arnumber=10110167
Reference18 articles.
1. EMA-based modeling of the surface potential and drain current of dual-material gate-all-around TFETs
2. Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs
3. Analytical modelling of subthreshold characteristics of RE-GAA FinFET using center potential
4. Analog and RF performance of a multigate FinFET at nano scale
5. 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs
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1. Analytical Modeling for Electrical Characteristics of Source Pocket-Based Hetero Dielectric Double-Gate TFETs;Silicon;2023-11-14
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