The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation-Reference-Cited by-同舟云学术

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The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

Published:1997-05 Issue:5 Volume:18 Page:187-189
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kan-Yuan Lee ,Yean-Kuen Fang ,Chii-Wen Chen ,Huang K.C.,Mong-Song Liang ,Wuu G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/12356/00568757.pdf?arnumber=568757

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns;IEEE Transactions on Electron Devices;2012-12

2. Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process;IEEE Transactions on Electron Devices;2011-08

3. Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching Structures;IEEE Transactions on Electron Devices;2011-07

4. Plasma-Induced Damage on the Performance and Reliability of Low-Temperature Polycrystalline Silicon Thin-Film Transistors;Journal of The Electrochemical Society;2007

5. Process Induced Instability and Reliability Issues in Low Temperature Poly-Si Thin Film Transistors;2006 IEEE International Reliability Physics Symposium Proceedings;2006-03

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