A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric-Reference-Cited by-同舟云学术

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A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric

Published:2008-02 Issue:2 Volume:55 Page:500-505
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kwon Jae-Hong,Seo Jung-Hoon,Shin Sang-Il,Kim Kyung-Hwan,Choi Dong Hoon,Kang In Byeong,Kang Hochul,Ju Byeong-Kwon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4435989/04436000.pdf?arnumber=4436000

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