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Physical Model Analysis During Transient for Series-Connected HVIGBTs

  • Published:2014-11 Issue:11 Volume:29 Page:5727-5737
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Ji Shiqi,Lu Ting,Zhao Zhengming,Yu Hualong,Yuan Liqiang,Yang Sheng,Secrest Caleb

Funder

National High Technology Research and Development Program

Power Electronics Science and Education Development Program of Delta Environmental & Educational Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analytical Temperature-Dependent Turn-Off Model for High-Voltage Field-Stop IGBTs Considering the Influence of Drive Circuit;IEEE Transactions on Power Electronics;2024-08

2. A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

3. An Analytical Carrier Recombination Turn-Off Transient Model for High-Voltage IGBTs;IEEE Transactions on Power Electronics;2024-06

4. An IGBT behavior model suitable for series applications;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

5. A Novel Lumped-Charge Model for Insulated Gate Bipolar Transistor Based on Dynamic Charge Control;IEEE Transactions on Power Electronics;2023-08
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