Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse-Reference-Cited by-同舟云学术

Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

Published:2023-10 Issue:10 Volume:44 Page:1628-1631
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Tae-Hyeon¹^ORCID,Phadke Omkar¹^ORCID,Luo Yuan-Chun¹^ORCID,Mulaosmanovic Halid²^ORCID,Mueller Johannes²,Duenkel Stefan²,Beyer Sven²,Khan Asif Islam¹,Datta Suman¹^ORCID,Yu Shimeng¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. GlobalFoundries Fab1 LLC & Company KG, Dresden, Germany

Funder

PRISM, one of the SRC/DARPA JUMP 2.0 centers

the German Bundesministerium fur Wirtschaft

Intelligence Advanced Research Projects Activity

the State of Saxony in the frame of the Important Project of Common European Interest

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10237236.pdf?arnumber=10237236

Reference12 articles.

1. Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells

2. A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs;trentzsch;IEDM Tech Dig,2016

3. BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry

4. Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices

5. Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

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