Fuse Devices for Pruning in Memristive Neural Network-Reference-Cited by-同舟云学术

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Fuse Devices for Pruning in Memristive Neural Network

Published:2023-03 Issue:3 Volume:44 Page:520-523
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Tae-Hyeon¹^ORCID,Hong Kyungho¹^ORCID,Kim Sungjoon¹,Park Jinwoo²,Youn Sangwook²,Lee Jong-Ho¹^ORCID,Park Byung-Gook¹^ORCID,Kim Hyungjin²^ORCID,Choi Woo Young¹^ORCID

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea

2. Department of Electrical and Computer Engineering, Inha University, Incheon, South Korea

Funder

NRF

Korean Government

Brain Korea 21 (BK21) FOUR Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10018401.pdf?arnumber=10018401

Reference29 articles.

1. Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

2. Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

3. Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications

4. 4‐bit Multilevel Operation in Overshoot Suppressed Al ₂ O ₃ /TiO _x Resistive Random‐Access Memory Crossbar Array

5. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

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1. Threshold learning algorithm for memristive neural network with binary switching behavior;Neural Networks;2024-08

2. Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication;ACS Applied Electronic Materials;2024-05-30

3. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses;Science China Information Sciences;2024-04-19

4. Polysilicon-Channel Synaptic Transistors for Implementation of Short- and Long-Term Memory Characteristics;Biomimetics;2023-08-15

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