Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction-Reference-Cited by-同舟云学术

Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction

Published:2023-07 Issue:7 Volume:44 Page:1156-1159
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sang Yimeng¹,Zhang Dongqi¹,Zhuang Zhe²^ORCID,Yu Junchi¹,Xu Feifan¹^ORCID,Jiang Di¹,Wang Ke¹,Tao Tao¹^ORCID,Wang Xinran¹^ORCID,Zhang Rong³,Liu Bin¹^ORCID

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, and the Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, P. R. China

2. School of Integrated Circuits, Nanjing University, Suzhou, P. R. China

3. Tan Kah Kee Innovation Laboratory, Institute of Future Display Technology, Xiamen University, Xiamen, P. R. China

Funder

National Key Research and Development Program of China

National Nature Science Foundation of China

Leading-Edge Technology Program of Jiangsu Natural Science Foundation

Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials