RRAM Device Performances Under Capacitive-Enhanced Current Programming Scheme-Reference-Cited by-同舟云学术

RRAM Device Performances Under Capacitive-Enhanced Current Programming Scheme

Published:2023-07 Issue:7 Volume:44 Page:1112-1115
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bauvent Thomas¹^ORCID,Trotti Paola¹,Billoint Olivier¹,Nodin Jean-François¹,Moursy Yasser¹,Molas Gabriel²^ORCID,Pillonnet Gael¹^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, Leti, Grenoble, France

2. Weebitnano Ltd., Hod Hasharon, Israel

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10122513.pdf?arnumber=10122513

Reference19 articles.

1. A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

2. Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation;li;Proc 7th Annu Non-Volatile Memory Technol Symp (NVMTS),2014

3. OxRAM for embedded solutions on advanced node: scaling perspectives considering statistical reliability and design constraints

4. Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

5. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

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