Dependence of the Transfer Characteristics of Metal-Oxide Thin-Film Transistors on the Temperature of an Extended Oxidizing Heat-Treatment-Reference-Cited by-同舟云学术

Dependence of the Transfer Characteristics of Metal-Oxide Thin-Film Transistors on the Temperature of an Extended Oxidizing Heat-Treatment

Published:2023-03 Issue:3 Volume:44 Page:452-455
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Yuqi¹^ORCID,Xia Zhihe¹^ORCID,Wong Man¹^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology (HKUST), Hong Kong, China

Funder

National Key Research and Development Program

State Key Laboratory on Advanced Displays and Optoelectronics Technologies

Research Grants Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10029873.pdf?arnumber=10029873

Reference17 articles.

1. Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

2. Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect

3. Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

4. Mobility–stability trade-off in oxide thin-film transistors

5. IGZO-Based Compute Cell for Analog In-Memory Computing—DTCO Analysis to Enable Ultralow-Power AI at Edge

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