The Structural and Electrical Properties of High-K Hf-Sm-O Thin Films Prepared by Atomic Layer Deposition
Author:
Affiliation:
1. Nikolaev Institute of Inorganic Chemistry SB RAS,Novosibirsk,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225098.pdf?arnumber=10225098
Reference45 articles.
1. Thermal expansion behaviour of some rare earth oxide pyrochlores
2. Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method
3. The System Hafnia-Samaria
4. Research of Atomic Layer Deposited HfO2/TiO2 Multilayer Structures by Spectroscopic and Multiangle Monochromatic Null Ellipsometry
5. High-entropy Sm2B2O7 (B=Ti, Zr, Sn, Hf, Y, Yb, Nb, and Ta) oxides with highly disordered B-site cations for ultralow thermal conductivity
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