A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process-Reference-Cited by-同舟云学术

A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process

Published:2018-02 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Solid - State Circuits Conference - (ISSCC)
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Author:

Chun Ki Chul,Chu Yong-Gyu,Heo Jin-Seok,Kim Tae-Sung,Kim Soohwan,Yang Hui-Kap,Kim Mi-Jo,Lee Chang-Kyo,Kim Juhwan,Yoon Hyunchul,Shin Chang-Ho,Cha Sanguhn,Kim Hyung-Jin,Kim Young-Sik,Kim Kyungryun,Kim Young-Ju,Choi Wonjun,Yim Dae-Sik,Moon Inkyu,Kim Young-Ju,Lee Junha,Choi Young,Kwon Yongmin,Choi Sung-Won,Kim Jung-Wook,Park Yoon-Suk,Kang Woongdae,Chung Jinil,Kim Seunghyun,Ryu Yesin,Cho Seong-Jin,Shin Hoon,Jung Hangyun,Kwon Sanghyuk,Kang Kyuchang,Lee Jongmyung,Song Yujung,Kim Young-Jae,Kim Eun-Ah,Ha Kyung-Soo,Kim Kyoung-Ho,Hyun Seok-Hun,Ko Seungbum,Choi Jung-Hwan,Sohn Young-Soo,Park Kwang-Il,Jang Seong-Jin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8304413/8310156/08310256.pdf?arnumber=8310256

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