A Comprehensive Review of DRAM NBTI Issues and Solutions-Reference-Cited by-同舟云学术

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A Comprehensive Review of DRAM NBTI Issues and Solutions

Published:2023-12-08 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 IEEE International Conference on Memristive Computing and Applications (ICMCA)
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Author:

Shan Faxian¹,Li Pinghui¹,Wang Ming¹,Tang Wei¹,Cao Yue¹,Wang Shun¹,Cai Hu¹,Hou Chuangming¹,Jiang Zhiyong¹

Affiliation:

1. ChangXin Memory Technologies, Inc.,Hefei,China,230088

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10480910/10480927/10481256.pdf?arnumber=10481256

Reference13 articles.

1. A comprehensive model of PMOS NBTI degradation

2. Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

3. On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

4. Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors

5. On the temperature dependence of NBTI recovery

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