Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/4563994/5395784/05411789.pdf?arnumber=5411789
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical quenching mechanism in InAs quantum dots in an Al0.95Ga0.05As matrix;Journal of the Korean Physical Society;2017-01
2. Study of electron-related intersubband optical properties in three coupled quantum wells wires with triangular transversal section;Superlattices and Microstructures;2015-11
3. Broken Reflection Symmetry and Diamagnetic Coefficient of Carriers Confined in Semiconductor Lateral Quantum Dot Molecules;Ukrainian Journal of Physics;2015-02
4. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
5. Optical anisotropy in InP string-like aligned quantum dots;Journal of the Korean Physical Society;2014-06
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