S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure-Reference-Cited by-同舟云学术

S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure

Published:2018-12 Issue:12 Volume:66 Page:5696-5707
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Giofre Rocco^ORCID,Colangeli Sergio^ORCID,Ciccognani Walter^ORCID,Costanzo Ferdinando,Polli Giorgio,Salvucci Alessandro^ORCID,Vittori Marco,Sotgia Manuela^ORCID,Cirillo Maurizio^ORCID,Limiti Ernesto^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8572808/08445715.pdf?arnumber=8445715

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