Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors-Reference-Cited by-同舟云学术

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Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors

Published:2008-07 Issue:7 Volume:29 Page:771-774
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Jone F.,Lee J. R.,Wu Kuo-Ming,Huang Tsung-Yi,Liu C. M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4558060/04558084.pdf?arnumber=4558084

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis on effect of hot-carrier-induced degradation of NPT-IGBT;Solid-State Electronics;2024-08

2. Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor with Shallow Trench Isolation and Step Oxide Improvement;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

3. The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET;IEEE Transactions on Electron Devices;2021-03

4. A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor;IEEE Transactions on Device and Materials Reliability;2018-06

5. Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates;IEEE Transactions on Electron Devices;2017-08

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