Effect of <formula formulatype="inline"><tex Notation="TeX">$\hbox{NH}_{3}$</tex></formula> Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-<formula formulatype="inline"><tex Notation="TeX">$ \kappa$</tex></formula> Dielectric nMOSFETs-Reference-Cited by-同舟云学术

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Effect of $\hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-$ \kappa$ Dielectric nMOSFETs

Published:2011-03 Issue:3 Volume:58 Page:812-818
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Yu-Ting,Chen Kun-Ming,Lin Cheng-Li,Yeh Wen-Kuan,Huang Guo-Wei,Lai Chien-Ming,Chen Yi-Wen,Hsu Che-Hua,Huang Fon-Shan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5718234/05699353.pdf?arnumber=5699353

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology;IEEE Transactions on Electron Devices;2022-03

2. Manufacturing Solutions;Dependable Multicore Architectures at Nanoscale;2017-08-30

3. Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs;Semiconductor Science and Technology;2014-09-15

4. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs;IEEE Transactions on Electron Devices;2013-01

5. Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs;IEEE Electron Device Letters;2012-10

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