Defect Engineering of TlPt<sub>2</sub>S<sub>3</sub> for Highly Polarization-Sensitive Photodetector-Reference-Cited by-同舟云学术

Defect Engineering of TlPt₂S₃ for Highly Polarization-Sensitive Photodetector

Published:2023-02 Issue:1 Volume:15 Page:1-6
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Wang Wenyue¹^ORCID,Liu Fangqi²,Shi Jian¹,Yang Zixin³,Wang Tongtong²,Liu Bin²,Yu Qiang³,Zhu Sicong²,Wang Xianping¹^ORCID,Wu Jian³^ORCID

Affiliation:

1. Jiangxi Key Laboratory of Photoelectronic and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, China

2. Wuhan University of Science and Technology, College of Science, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Wuhan, China

3. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/9999138/10004635.pdf?arnumber=10004635

Reference33 articles.

1. 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

2. Polarization sensitive solar-blind ultraviolet photodetectors based on ultrawide bandgap KNb3O8 nanobelt with fringe-like atomic lattice;ping;Adv Funct Mater,2022

3. High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition

4. Solution-processed one-dimensional CsCu2I3 nanowires for polarization-sensitive and flexible ultraviolet photodetectors

5. Anisotropic ultrasensitive PdTe 2 -based phototransistor for room-temperature long-wavelength detection

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perovskite CsCu2I3-based optoelectronic device with exceptional polarization sensitivity via point vacancy modulation;Applied Physics Letters;2023-10-23