Heterogeneously integrated membrane III-V compound semiconductor devices with silicon photonics platform
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/2944/4481213/09933622.pdf?arnumber=9933622
Reference39 articles.
1. 2ch × 53-Gbps Optical Transmission Performance of a Low-Power PAM4 Transmitter Front-End Flip-Chip-Bonded 1.3-μm LD Array-on-Si
2. Photonic Packaging: Transforming Silicon Photonic Integrated Circuits into Photonic Devices
3. Heterogeneously integrated widely tunable laser using lattice filter and ring resonator on Si photonics platform
4. Membrane III-V/Si DFB Laser Using Uniform Grating and Width-Modulated Si Waveguide
5. Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform
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1. Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate;Journal of Electronic Materials;2024-07-16
2. Scaling photonic integrated circuits with InP technology: A perspective;APL Photonics;2024-05-01
3. Grating-assisted codirectional couplers for hybrid integration of active III-V on a normal SOI platform;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15
4. Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier;Optics Express;2024-01-24
5. Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket;Photonics;2023-05-06
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